metal-insulator transition

from the varying curve of vs system parameters, we can easily find sharp transition, corresponding to metal-insulator transition.

我们从谱平均随模型中势能参数的变化曲线上，可以发现明显的转折点，这些转折点对应着金属-绝缘体相变点。

The results at zero-temperature and finite temperature are analyzed, the possibility and critical temperature of Mott metal-insulator transition is also investigated.

在绝对零度和有限温度对结果作了分析，讨论了Mott金属-绝缘体相变的转变温度。

At that time, I was fascinated with the metal-insulator transition as envisioned 7 by Mott.

那时, 我对莫特设想的金属 - 绝缘体的过渡理论着迷.

The temperature dependence of resistance presents a smooth metal-insulator transition far below the magnetic transition, and the MR monotonically increases with decreasing temperature under 8 kOe field, both of which are related to the structural defects in the films including grain boundaries and porosity.

薄膜的电阻－温度关系具有平缓的金属－绝缘体转变，转变温度远低于其居里温度；在8kOe磁场下，薄膜的磁电阻随温度下降而单调上升。

at that time, i was fascinated with the metal-insulator transition as envisioned7 by mott.

那时，我对莫特设想的金属-绝缘体的过渡理论着迷。